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| IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 OptiMOS(R)-P Trench Power-Transistor Product Summary V DS -30 4 -100 V m A Features * P-channel - Logic Level - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (RoHS Compliant) * Ultra low Rds(on) * 100% Avalanche tested * Intended for reverse battery protection R DS(on),max (SMD version) ID PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100P03P3L-04 IPI100P03P3L-04 IPP100P03P3L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3P03L04 3P03L04 3P03L04 drain pin 2 gate pin 1 source pin 3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25C, V GS=-10V T C=100C, V GS=-10V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25C T C=25C I D=-80A Value Unit A -100 -100 -400 450 -16 / +5 200 -55 ... +175 55/175/56 mJ V W C Rev. 1.1 page 1 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Parameter Symbol Conditions min. Thermal characteristics2) Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) - - 0.65 62 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0V, I D=-250A V GS(th) V DS=V GS, I D=-475A V DS=-30V, V GS=0V, T j=25C V DS=-30V, V GS=0V, T j=125C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-16V, V DS=0V V GS=-4.5V, I D=-50A V GS=-4.5V, I D=-50A, SMD version V GS=-10V, I D=-80A V GS=-10V, I D=-80A, SMD version -30 -1 -1.5 -2.1 V Zero gate voltage drain current I DSS - -0.1 -1 A - -10 -10 4.8 4.5 3.3 3.0 -100 -100 7.6 7.3 4.3 4 nA m Rev. 1.1 page 2 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Parameter Symbol Conditions min. Dynamic characteristics2) Values typ. max. Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage C iss C oss Crss t d(on) tr t d(off) tf V DD=-15V, V GS=-10V, I D=-50A, R G=6 V GS=0V, V DS=-25V, f =1MHz - 7150 2150 1650 30 45 200 180 9300 2800 2500 - pF ns Q gs Q gd Qg V plateau V DD=-24V, I D=-80A, V GS=0 to -10V - 25 55 150 -3.0 33 82.5 200 - nC V IS I S,pulse V SD T A=25C T A=25C V GS=0V, I F=-80A V R=-15V, I F=-50A, di F/dt =100A/s -0.6 -1 -100 -400 -1.2 A V Reverse recovery time2) t rr - 50 - ns Reverse recovery charge2) 1) Q rr - 55 - nC Current is limited by bondwire; with an R thJC = 0.65 K/W the chip is able to carry I D=-195A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos Defined by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 1 Power dissipation P tot=f(T C); V GS -4 V 2 Drain current I D=f(T C); V GS -4 V 250 120 200 100 80 150 P tot [W] -I D [A] 100 50 0 0 50 100 150 200 60 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 1 s 10 s 100 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 limited by on-state resistance 100 1 ms 10-1 0.1 0.05 Z thJC [K/W] -I D [A] 0.01 10 10-2 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 -V DS [V] t p [s] Rev. 1.1 page 4 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 400 10 V 5V 4.5 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C parameter: V GS 16 3V 14 300 4V 3.5 V 12 10 200 3.5 V R DS(on) [m] -I D/ [A] 8 6 4 4V 4.5 V 5V 10 V 100 3V 2 2.5 V 0 0 1 2 3 4 5 6 0 0 20 40 60 80 100 120 140 160 180 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 4V parameter: T j 200 -55 C 25 C 175 C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = -80 A; V GS = 10 V 5 4 150 R DS(on) [m] 1 2 3 4 5 3 -I D [A] 100 2 50 1 0 0 -60 -20 20 60 100 140 180 -V GS [V] T j [C] Rev. 1.1 page 5 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2 1.75 4750A 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 105 1.5 1.25 475A -V GS(th) [V] C [pF] 1 0.75 0.5 104 Ciss Coss Crss 0.25 0 -60 -20 20 60 100 140 180 103 0 5 10 15 20 25 30 T j [C] -V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I AV = f(t AV) parameter: T j(start) 1000 102 100 -I AV [A] 25C 100C 150C I F [A] 175 C 25 C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 1 1 10 100 1000 -V SD [V] t AV [s] Rev. 1.1 page 6 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 13 Typical avalanche energy E AS = f(T j) parameter: I D 2000 1800 1600 1400 33 20 A 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 37 35 1000 800 600 -V BR(DSS) [V]/ 75 125 175 225 E AS [mJ] 1200 40 A 31 29 80 A 400 27 200 0 25 25 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 16 Gate charge waveforms 8V 32 V V GS Qg 10 8 -V GS [V] 6 4 2 Q gs Q gd Q gate 0 0 50 100 150 200 Q gate [nC] Rev. 1.1 page 7 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2007-09-25 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Revision History Version Date Changes Type on page 1 changed from IP_100P06P3L-04 to IP_100P03PL 25.09.2007 04 Rev 1.1 Rev. 1.1 page 9 2007-09-25 |
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